METHOD OF MANUFACTURING SEMICONDUCTING RESISTANCE STRAIN GAUGE PRESSURE CONVERTER Russian patent published in 1995 - IPC

Abstract RU 2035707 C1

FIELD: microelectronics. SUBSTANCE: before polishing and buffing the glass bearing member, the connection of the base with the bearing member is heated up to the temperature of 500°C, conditioned for 3 hours under this temperature, and then cooled at the rate of 80°C/h. EFFECT: enhanced accuracy of measurements. 1 dwg

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RU 2 035 707 C1

Authors

Chistjakov A.I.

Majorov V.V.

Filichkina T.V.

Dates

1995-05-20Published

1992-09-22Filed