PROCESS OF MANUFACTURE OF SEMICONDUCTOR TENSOR-RESISTOR PRESSURE CONVERTER Russian patent published in 1997 - IPC

Abstract RU 2097720 C1

FIELD: measurement and testing equipment, specifically, manufacture of semiconductor integrated deformation and pressure meters. SUBSTANCE: semiconductor tensor-resistor pressure converter is manufactured by stage-by-stage connection of elements of transducer. After joining of base made from kovar with intermediate base fabricated from glass it is tested with polarimeter, annealed, ground and drilled. Peculiarity of process consists in selection of annealing mode after drilling and grinding which will depend on diameter of drilling of main and intermediate bases, namely: main and intermediate bases are heated to temperature of 500 C with holding for 3.5-3.9 h and are cooled with minimal diameter of drilling at rate not exceeding 80 C/h and with maximal diameter-not than 200 C/h. In this case minimal temperature hysteresis is achieved. EFFECT: improved efficiency of process. 2 cl, 1 dwg, 2 tbl

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RU 2 097 720 C1

Authors

Chistjakov A.I.

Chistjakova T.S.

Dates

1997-11-27Published

1994-08-04Filed