METHOD FOR MANUFACTURING A PHOTOCONVERTER ON A GERMANIUM SOLDERED SUBSTRATE AND A DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2019 - IPC H01L31/18 

FIELD: power engineering.

SUBSTANCE: invention relates to solar power engineering, particularly, to manufacturing of photoconverters on GaInP/Ga(In)As/Ge three-stage epitaxial structures. Method of making photoconverters on a germanium-doped substrate involves forming, on a germanium substrate with grown epitaxial layers, a three-cascade structure of a photoresistive mask with windows for face contacts of a photoconverter and a diode, etching of diode pad, sputtering of layers of front metal coating, removal of photoresist, creation of photoresistive mask with windows under mesa-insulation of photoconverter and diode, etching the mesa, application of protective coating, bleeding of substrate, removal of protective coating, sputtering of layers of rear metallization, annealing of contacts, opening of optical window by etching, application of antireflection coating, separation of plate, rectification of photo converter with built-in diode by cooling in nitrogen, wherein after mesa etching there formed is a recess in the mesa-groove with a disc-like groove, a protective coating is applied by successively forming layers of positive, negative photoresist by centrifugation and a layer of quick-drying enamel by spraying, gluing plate with protective coating on ledges of carrier disc, releasing substrate by chemical-dynamic etching in aqueous solution of hydrofluoric acid and hydrogen peroxide until deepening in mesa-groove with simultaneous separation of plate into chips, after sputtering of rear metal coating, protective coating is removed with simultaneous detachment of chips from carrier disc, and chips are straightened after annealing of contacts and spraying of antireflection coating. Besides, the device for implementation of the above method is proposed.

EFFECT: invention increases output of usable photoconverters with germanium substrate thinned to thickness of ~20 mcm.

2 cl, 10 dwg