FIELD: electronics, integrated microcircuits manufacturing. SUBSTANCE: layer of hydrolytic-polycondensed silicon dioxide is used as binding material between semiconducting plate and dielectric substrate. This layer is formed at semiconductor plate with circuit structure by film-making solution covering filled by silicon-organic composition. Dielectric substrate is applied to covering and full construction is treated by heating and calcining at temperature 400 C. EFFECT: more simple technology of silicon-dielectric structure making.
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