FIELD: measurement technology. SUBSTANCE: temperature-sensitive element in the form of layer of germanium is placed on substrate of electric insulation semiconductor material (gallium arsenide) inside case. Substrate is attached to base of case with insulating cryoadhesive with high thermal conductivity (for instance cryosilane). Each wire lead of temperature-sensitive element is cemented with cryoadhesive in two points over its length: at base and in lid of case. Relation of lengths of parts of leads between attachment points is 1:1. EFFECT: enhanced resistance to dynamic loads. 2 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| TEMPERATURE-SENSITIVE ELEMENT | 1991 |
|
RU2037791C1 |
| METHOD FOR MANUFACTURING NANOHETEROSTRUCTURE CHIPS AND ETCHING MEDIUM | 2012 |
|
RU2485628C1 |
| FALL DETECTORS AND FALL DETECTION METHOD | 2009 |
|
RU2559933C2 |
| DEVICE FOR MEASUREMENT OF TEMPERATURE OF HEAT-TRANSFER AGENT | 2008 |
|
RU2373502C1 |
| SEMICONDUCTOR PRESSURE TRANSDUCER | 2023 |
|
RU2814435C1 |
| RESISTANCE THERMOMETER | 0 |
|
SU667826A1 |
| DEVICE FOR MEASURING HEAT CARRIER TEMPERATURE AND WIRELESS TEMPERATURE MEASURING DEVICE | 2011 |
|
RU2450250C1 |
| METHOD OF MEASURING TEMPERATURE, AUTOELECTRONIC EMISSION THERMOELECTRONIC-MECHANICAL TRANSDUCER AND METHOD OF MAKING SAID TRANSDUCER | 2010 |
|
RU2447411C1 |
| METHOD OF MAKING MULTILAYER OHMIC CONTACT FOR PHOTOELECTRIC CONVERTER (VERSIONS) | 2009 |
|
RU2391741C1 |
| METHOD OF PRODUCING DIODE OPTOELECTRONIC PAIRS RESISTANT TO GAMMA-NEUTRON RADIATION | 2020 |
|
RU2739863C1 |
