METHOD FOR MANUFACTURING NANOHETEROSTRUCTURE CHIPS AND ETCHING MEDIUM Russian patent published in 2013 - IPC H01L31/18 B82B3/00 H01L21/306 

FIELD: electrical engineering.

SUBSTANCE: method for manufacturing nanoheterostructure chips grown on a germanium substrate includes application of ohmic contact onto the reverse and frontal surfaces of the nanoheterostructure, partial removal of the nanoheterostructure frontal contact layer by way of chemical etching, application of an antireflective coating onto the nanoheterostructure fontal surface and the chips side surface passivisation with a dielectric. The structure division into chips is performed by etching through a photoresist mask on the side of the nanoheterostructure fontal surface to a depth of 10-30 mcm of the nanoheterostructure and the germanium substrate in an etching medium containing bromine hydride, hydrogen peroxide and water at specified components.

EFFECT: creation of a side surface of isolation channels in monolith nanoheterostructures on a germanium substrate that is smooth and free of projections and pockets by means of a single process in the same etching medium using liquid chemical etching method which ensures quality application of protective coatings onto the isolation channels side surface and the nanoheterostructure division into individual elements which results in increased yield of serviceable products and their reliability enhancement as well as extension of individual elements service life.

2 cl, 6 dwg, 2 ex