SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 2024 - IPC G01L9/04 H01L29/84 

FIELD: measurement.

SUBSTANCE: invention relates to measurement equipment and can be used to measure static and dynamic pressures of gases and liquids, internal mechanical stresses of instrument compounds and concrete building structures. Semiconductor pressure transducer comprises a gallium arsenide substrate, on which a base layer and a buffer layer consisting of gallium-aluminium arsenide are successively grown, volume-sensitive element and doped with silicon to concentration of charge carriers, taking value from range from 2*10¹⁷ to 10²⁰ cm^-3, contact layer from gallium arsenide GaAs, metal contact pads and a protective layer consisting of undoped gallium arsenide with charge carrier concentration n from 10¹⁴ to 10¹⁶ cm^-3, wherein the protective layer is grown in a single growth process with the volume-sensitive element and the contact layer and is located between them, wherein its thickness ranges from 5 to 200 nm, and thickness of base layer, buffer layer and volume-sensitive element is from 0.1 to 10 mcm each, aluminium concentration x in the volume-sensitive element takes a value in range from 0.20 to 0.40, and the aluminium concentration y in the buffer layer at distance from the base layer first increases from 0 to a value greater than x by 0.02–0.05, and then y decreases from the achieved value to x, wherein the concentration of charge carriers in the volume-sensitive element takes a value in range from 10¹⁵ to 10²⁰ cm^-3.

EFFECT: high sensitivity to pressure, high quality factor, protection against oxidation of the volume-sensitive element and high temporal stability of characteristics.

1 cl, 1 dwg