INTEGRAL CIRCUIT OF HIGH-FREQUENCY DIODE THYRISTOR Russian patent published in 1995 - IPC

FIELD: semiconductor microelectronics. SUBSTANCE: integral circuit has power p-n-p transistor, power n-p-n transistor, field effect transistor, resistor and two input terminals. Base lead of power p-n- p transistor is connected to collector of power p-n-p transistors. Emitter transition of power p-n-p transistor is by-passed by field effect transistor. Each emitter is connected to input terminal. In addition device has two n-p-n transistors, circuit of stabilized diodes and second resistor. Power p-n-p transistor has two collectors. Its first collector is connected to base lead of power n-p- n transistor and to collector of first additional n-p-n transistor which base lead is connected to collector of second additional n-p-n transistor and to source and gate of field effect transistor. Drain of field effect transistor is connected to emitter of two-collector power p-n-p transistor. Its second collector is connected to base lead of second additional n-p-n transistor which is connected through additional resistor to its emitter and to anode of circuit of stabilized diodes. Cathode of this circuit is connected to collector of power n- p-n transistor which emitter is connected to emitters of additional n- p-n transistors. EFFECT: increased functional capabilities. 1 dwg