INTEGRAL CIRCUIT FOR CUT-OFF THYRISTOR Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: integral circuit has two transistors 3 and 7 with two collectors, power transistor 4, final implementation transistors 5 and 9, field effect transistor 6. First collector of transistor 3 is connected to base lead of transistor 4 and to collector of transistor 5 which base lead is connected to first collector of transistor 7 and to source of field effect transistor 6 which drain is connected to emitter of transistor 3, which second collector is connected to base lead of transistor 7. Base lead of transistor 3 is connected through resistor 8 to emitter of transistor 9. Base of transistor 9 is connected through resistor 10 to emitter of the same transistor. Emitter of transistor 9 is connected to emitters of transistors 5 and 7 and to emitter of transistor 4 which collector is connected through resistor 2 to second collector of transistor 7. EFFECT: decreased cut-off current, increased speed for wide range of voltage and temperature. 1 dwg