METHOD OF PRODUCING GALLIUM SILICATE AT ATOMIC RATIO SI/GA Si/σa ≥ 20 = 20 Russian patent published in 1995 - IPC

Abstract RU 2041860 C1

FIELD: chemical technology. SUBSTANCE: method involves hydrothermal crystallization of reaction mixture which contains sources of SiO2 and Ga2O3 in aqueous-alkaline medium. The source of parental Si-compound fine dust of metallurgic manufacture at particle size 0.1-5.0 mc which contains 86-99 wt. -% SiO2 and impurities also. Reaction mixture does not contain organic compounds of nitrogen and hydrocarbons. Stirring is carried out at the following mole ratio: SiO2:Ga2O3 40-140; OH-:SiO2 0.2-0.6; H2O:SiO2 20-120; Na2O:SiO2 0.1-0.3. Hydrothermal crystallization is carried out at 413-373 K for 1-100 h. EFFECT: improved method of production. 2 cl, 1 tbl

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RU 2 041 860 C1

Authors

Martin Vallau[De]

Arno Tisler[De]

Roland Tome[De]

Klaus Konradin Unger[De]

Dates

1995-08-20Published

1991-02-21Filed