PROCESS FOR PREPARING FILM-FORMING SOLUTION AND PROCESS FOR FORMING DIELECTRIC COATING USING THIS SOLUTION Russian patent published in 1995 - IPC

FIELD: dielectric coatings on semiconductor structures, ceramic and glass plates in radio electronics. SUBSTANCE: a film- forming solution is prepared by reacting a mixture of tetraalkoxysilane and trialkylalkoxysilane of the general formula R₃(R¹O)Si wherein R,R′ are Me, Et, iso- Pr and n-Pr in an aqueous organic medium in the absence or presence of 0.01-0.05 mole per mole of a mixture of silanes of an acid catalyst. The tetraalkoxysilane to trialkylalkoxysilane molar ratio is (5.0-12.5):1 respectively the molar amount of water is 2.5-5.0 moles per mole of a mixture of silanes, the molar amount of solvent is 1.0-3.0 moles per mole of a mixture of silanes. A coating is prepared by applying a solution onto the pretreated surface by centrifugation at a centrifuge rotational speed of 3000 to 6000 revolutions per minute followed by heat treatment in a nitrogen-oxygen atmosphere under the following conditions: 100-200 C for 15 to 20 minutes and then 375-425 C for 60 minutes. The semiconductor surface is first washed off with a peroxide ammonia solution followed by annealing and gas-phase treatment with hexamethyl disilizane. EFFECT: improved preparation process. 5 cl, 2 tbl