FIELD: chemistry.
SUBSTANCE: method of making silicon dioxide film involves feeding tetramethoxysilane and oxygen in a stream of inert gas into a reaction zone in volume ratio of tetramethoxysilane to oxygen equal to 1:5-10, decomposition of tetramethoxysilane vapour in the presence of oxygen and deposition of a silicon dioxide film on plates at temperature of 380-500°C at atmospheric pressure for 10-30 minutes. The film is deposited on quartz or silicon plates.
EFFECT: uniform silicon dioxide film is obtained with low power consumption and without use of toxic substances.
3 cl, 2 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PRODUCING COATING BASED ON SILICON DIOXIDE OF QUARTZ ARTICLE INNER SURFACE | 2015 |
|
RU2631779C2 |
| METHOD OF MANUFACTURING SILICON DIOXIDE FILM ON SUBSTRATE | 1996 |
|
RU2116686C1 |
| METHOD OF MANUFACTURE OF LAYERS OF SILICON DIOXIDE | 1992 |
|
RU2029412C1 |
| PROCESS FOR PREPARING FILM-FORMING SOLUTION AND PROCESS FOR FORMING DIELECTRIC COATING USING THIS SOLUTION | 1992 |
|
RU2044014C1 |
| PROCESS OF MANUFACTURE OF SILICA FILMS | 1988 |
|
RU2061095C1 |
| METHOD OF PRODUCING OPTICAL QUARTZ GLASS | 2016 |
|
RU2634321C1 |
| METHOD FOR PREPARATION OF POLYCRYSTALLINE HIGH-PURITY SILICON AND DEVICE THEREOF (VERSIONS) | 2006 |
|
RU2367599C2 |
| HYDRATED SILICON-OXYCARBIDE FILM AND ITS PRODUCTION PROCESS | 2002 |
|
RU2264675C2 |
| METHOD OF PRODUCING SILICON OXIDE COMPOUNDS DOPED WITH ALUMINIUM AND RARE-EARTH ELEMENTS | 2010 |
|
RU2436731C1 |
| METHOD FOR PRODUCING PROTECTIVE COATING COMPOSITION (VERSIONS) | 2022 |
|
RU2791716C1 |
