SEMICONDUCTOR PRESSURE CONVERTER AND METHOD OF MANUFACTURE Russian patent published in 1994 - IPC

FIELD: measurement technology. SUBSTANCE: beams 5 are attached to thinned parts of membrane, made of silicon, doped with boron with concentration of impurity no less than 5·10¹⁹cm^-3; thickness of the membrane is equal to 2-5 microns. Resistance strain gauges 4 are formed onto beams 5. During process of manufacture, protective film, made of silicon dioxide, is formed onto silicon plate 8. Windows are etched in the film for commutation buses 10 and thinned parts 11. Open areas are doped with boron, then plate is burnt at 1100-1200 deg. C during 1-3 hours. Mask in the areas of thinned parts is etched till achieving layer of silicon, and when width gets 0,5-0,8 initial thickness in the areas of the beams, silicon is etched in the solution of ethylendiamine in the areas of thinned parts at first. After mask is removed from areas of beams, silicon should be etched till achieving " stop"-layer. EFFECT: improved sensitivity of converter; improved output of fit items. 2 cl, 11 dwg