PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: conductive paste containing finely dispersed particles of silver size 1-10 μm, powder of fusible glass and organic binder with following proportion of components, per cent by mass: finely dispersed silver 55.0-70.0; fusible glass 14.5-21.0; organic binder 14.5-24.0 is injected into assembly zone of crystal in compliance with this method of manufacture of semiconductor devices, crystal is mounted, first stage of thermal treatment is performed at temperature 75-100 C for the course of 30-100 min, then second stage of thermal treatment is carried out at temperature 370-430 C for the course of 60-150 min in inert or reducing atmosphere. EFFECT: facilitated manufacture. 1 tbl