METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENTS Russian patent published in 1995 - IPC

FIELD: electronic devices. SUBSTANCE: paste that contains finely divided silver powder and organic binder material is applied to crosspieces of leads. The paste contains 55.0-70.0 mass percents of silver powder and 30.0-45.0 mass percents of organic binder material. Then method involves thermal processing, application to wiring area a semiconductor paste that contains organic binder material, powder of low-melting glass and finely dispersed silver particles which are shaped as flakes and which sizes are 1-10 mcm. The paste contains 55.0-70.0 mass percents of finely dispersed silver particles, 14.5-21.0 mass percents of low-melting glass, 14.5-24.0 percents of organic binder material. Then crystal is wired and additionally processed under temperature 75-100 C during 30-100 minutes and later under 370-430 C during 60-150 minutes. Finally crosspieces of leads are welded. EFFECT: increased functional capabilities. 1 tbl