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2 047 930

(13)

C1

(51)

IPC

(21) (22)

Application

93013089/10, 1993-03-10

(22)

Actual filing date

1993-03-10

(45)

Published

1995-11-10

(72)

Inventor

Mordvintsev V.M.Levin V.L.

(73)

Holder

Institut Mikroehlektroniki Ran

METHOD FOR DIAGNOSTICS OF INSULATING LAYER OF CONDUCTING SURFACE Russian patent published in 1995 - IPC

Abstract RU 2047930 C1

FIELD: methods for investigating thin films and surfaces of solid body by means of scanning tunnel microscopes (STM). SUBSTANCE: object is placed in STM tunnel gap, scanned with voltage U across tunnel gap in range covering both tunnel and emission mode of operation of STM including Ucr corresponding to jump of gap magnitude towards lower values upon reduction of U. EFFECT: facilitated procedure. 3 cl, 8 dwg

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RU 2 047 930 C1

Authors

Mordvintsev V.M.

Levin V.L.

Dates

1995-11-10—Published

1993-03-10—Filed

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