FIELD: computer engineering; storage devices implementing micro-and nanotechnology methods. SUBSTANCE: storage element has two metal electrodes separated by insulating slit and conducting carbon phase in slit which are placed in organic-material medium so that access is provided for molecules of this material to slit; insulating layer placed in tandem with carbonic conductivity phase within insulating slit on anode side prevents approach of carbonic conducting phase to anode surface at distance smaller than insulating layer thickness of 1-100 nm. Anode is to be best made of aluminium. EFFECT: improved design. 2 cl, 4 dwg
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