FIELD: metallurgy. SUBSTANCE: method involves vacuumizing working chamber; drying atmosphere and equipment of working chamber; melting a zone of basic silicon bar and introducing portions of alloying additive into melted zone middle part at predetermined frequency by nozzle spaced from this zone by a distance of 1.1-1.5 R, where R is radius of monocrystal to be grown. EFFECT: increased efficiency and improved quality of monocrystal. 3 cl, 1 dwg
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