DEVICE FOR PULLING MONOCRYSTALS Russian patent published in 2003 - IPC

FIELD: growing monocrystals for semiconductors and semiconductor joints. SUBSTANCE: proposed device is provided with at least one heat shield; according to invention, heater is made from flexible carbon- containing material in form of cylinder whose end faces are secured between coaxially positioned rigid rings made from carbon material and connected with current source. Thickness of wall of said heater is found from the following relationship: δ•ρ•c = 500-8500 L/sq m.K, where δ is thickness of heater wall, m; ρ is density of material from which heater is made, kg/cu m; c is specific heat capacity of material from which heater is made (at working temperature), J/kg. K. Rings made from carbon material may be connected to current source through heat shields. Layer of silicon nitride may be made on surface of heater on inner and/or outer side. Crucible and support which are made integral may made from silicon nitride. Device ensures production of crystals at low content of oxygen which are suitable for neutron alloying. EFFECT: enhanced efficiency. 7 cl, 5 dwg, 5 ex