POLYSILOCARB BASED SILICON CARBIDE MATERIALS, APPLICATIONS AND DEVICES Russian patent published in 2019 - IPC C01B32/977 C04B35/565 C30B23/00 C30B28/02 C30B29/36 

FIELD: chemistry; physics.

SUBSTANCE: combining the first liquid containing silicon, carbon and oxygen with the second fluid containing carbon. Polycarboxyloxane precursor composition is obtained, having a molar portion of carbon from about 30 % to 85 %, oxygen - from about 5 % to 40 % and silicon - from about 5 % to 35 %. After curing said composition, SiOC material is obtained, which is converted to super-high purity SiC in the form of granules, combined with a ceramic precursor which is formed from the polymer and sintered at temperature higher than 1200 °C. Obtained SiC structure is placed in a vapor deposition device and an ingot of monocrystalline SiC is formed. Ingot can be cut into plates, cut and etch to produce a semiconductor or field-effect transistor of the metal-semiconductor structure. Product contains ultrahigh purity silicon carbide of at least 99.9999 %, wherein total content of impurities selected from Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S and As is less than 1 ppm.

EFFECT: invention relates to chemical and semiconductor industry.

30 cl, 18 tbl, 10 dwg, 75 ex