BOULE OF THE III-V GROUPS ELEMENT NITRIDE USED FOR PRODUCTION OF SUBSTRATES AND THE METHOD OF ITS MANUFACTURE AND APPLICATION Russian patent published in 2006 - IPC C30B23/00 C30B23/02 C30B25/00 C30B25/02 C30B25/18 C30B29/38 C30B31/00 C30B31/22 C30B33/00 H01L21/203 H01L21/205 H01L27/00 

FIELD: semiconductor technology; production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules.

SUBSTANCE: the invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 10⁷ defects·cm^-2.

EFFECT: the invention ensures manufacture of the microelectronic devices of good quality and above indicated parameters.

102 cl, 9 dwg