FIELD: optical electronics. SUBSTANCE: method involves alternation of mobility of carrier. Transmission of electromagnetic waves through high- resistant semiconductor material is controlled by alternation of temperature of current carrier in semiconductor material by means of external source while temperature of semiconductor material is kept stable. Device for implementation of method has high- resistant plate, external source affecting plate and unit for stabilization of plate temperature. High-resistant semiconductor plate may be made from gallium arsenide or indium antimonide. EFFECT: increased functional capabilities. 6 cl, 1 dwg, 1 tbl
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