FIELD: manufacture of radiation detectors for visible and infrared optical radiation.
SUBSTANCE: proposed field-effect photocathode is manufactured from type A3B5 semiconductor material by etching blank and cleaning effective emissive surface until nuclear-pure surface is obtained. Then effective emissive surface is heated to 400 - 450 K and covered with sub-monolayer coating in the form of film of aluminum Al, 0.4-0.8 monolayers thick, in vacuum.
EFFECT: enhanced sensitivity of photocathode.
1 cl, 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
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|
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