FIELD: radio, communication.
SUBSTANCE: receiver of electromagnetic radiation comprises a semiconductor structure with an electron-hole junction based on gallium arsenide and external electrodes, the said electron-hole junction is made compensating deep chromium-doped with impurity distribution non-uniform in thickness of gallium arsenide layer, and in the surface area of the semiconductor structure the area is formed with the chromium concentration exceeding the donor concentration in the initial gallium arsenide, and in the internal volume of the semiconductor structure the area is formed with the chromium concentration lower than the donor concentration in the initial gallium arsenide.
EFFECT: expansion of photodetector spectral range of work from the infrared radiation to the vacuum ultraviolet.
2 cl, 1 tbl, 3 dwg
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0 |
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Authors
Dates
2014-12-20—Published
2013-08-19—Filed