METHOD FOR PRODUCTION OF LARGE ZINC SELENIDE CRYSTALS Russian patent published in 1995 - IPC

Abstract RU 2051211 C1

FIELD: crystal growing. SUBSTANCE: method involves growing a source crystal from melt, and cooling it to room temperature in a growing device at the rate of 18-20 deg/h. The crystal is calcined in air, heating it at the rate not over 110 deg/h to 300-330 C and holding it at this temperature for 4-5 h. Then the crystals are cooled to room temperature at the rate of 30-35 deg/h. EFFECT: higher efficiency.

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RU 2 051 211 C1

Authors

Kolesnikov N.N.

Kulakov M.P.

Ivanov Ju.N.

Dates

1995-12-27Published

1992-03-26Filed