ZINC SELENIDE PASTILLIZING METHOD Russian patent published in 2019 - IPC C30B11/02 C30B29/48 B01J2/04 

FIELD: technological processes.

SUBSTANCE: invention relates to the technology of producing zinc selenide – a wide-band-gap semiconductor, used in engineering in the form of bulk poly- and singlecrystals, as well as thin films obtained by thermal spraying of crystalline crumbs, for which the most suitable material is the same size material. For this purpose, a method is used for zinc selenide pastillizing by spontaneous drop crystallization in a temperature gradient in an argon atmosphere, wherein the drops crystallize before separation from the forming drop of the channel, wherein the drop volume rate is 6.7⋅10^-9–7.2⋅10^-9 m³/s, argon pressure is in range of 5.92–6.35 MPa, and crystallization front movement speed has value less than or equal to 9.7–10^-6 m/s.

EFFECT: invention enables to obtain spherical ZnSe crystals of stoichiometric composition, having mono-block structure.

1 cl, 2 dwg, 3 ex