SILICON POLISHING ETCHANT COMPOSITION Russian patent published in 1996 - IPC

Abstract RU 2057209 C1

FIELD: electrochemistry. SUBSTANCE: polishing etchant contains, g/l: heptanickelsulfate 200-400; hydrofluoric acid 28.7-63.2. EFFECT: increased efficiency. 1 tbl

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RU 2 057 209 C1

Authors

Zajtsev V.K.

Solomkin F.Ju.

Dates

1996-03-27Published

1992-12-07Filed