METHOD FOR PRODUCTION OF SILICON STRUCTURES Russian patent published in 1997 - IPC

FIELD: semiconductors, in particular, heavy-current electronics and microelectronics using direct concretion. SUBSTANCE: method involves polishing plates, their water-absorbing, processing in solution of hydrofluoric acid in deionized water, connection of plates in said solution with their back sides, drying connected plates in air at temperature of 100-130 C for at least 4 hours under simultaneous pressure of at least 0.003 Pa, subsequent heating of plates from 200 C to at least 1000 C at speed of at most 10 C per minute, and keeping them at said temperature. In addition before water-absorbing method involves generation of grooves which depth is at least 0.3 mcm and distance between which is in range of 20 - 1000 mcm. Grooves are made on polished side of plates. EFFECT: increased functional capabilities. 1 tbl