FIELD: crystal growing. SUBSTANCE: apparatus has growing chamber including melting chamber and crystallization chamber separated by diaphragm. Crucible with seed crystal is positioned in melting chamber. Heating pipe is mounted within crucible and connected with growing chamber housing. Heating pipe is formed as sleeve with jacket. Bottom of jacket has opening for flowing melt into crystallization zone. Sleeve height corresponds to melt level in crucible, when it is filled to maximum extent. It allows significant temperature gradients to be created in crystallization zone withit overheating upper layers of melt column. EFFECT: increased efficiency and enhanced reliability in operation. 1 dwg
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