INSTALLATION FOR GROWING CRYSTALS FROM MELT Russian patent published in 1997 - IPC

FIELD: crystal growing. SUBSTANCE: invention relates to directional crystallization in crucible. Invention aims to improve controlling heat processes in the crystallization front zone, in particular, controlling crystallization front shape by using heat-conducting body in the form of heat pipe, lower surface shape of which corresponding desired shape of crystallization front. Seed crystal is placed into crucible of installation into which heat pipe is installed on seed crystal, after which raw material is loaded through the pipe. Crucible is placed into growing unit in such a way that upper surface of seed crystal were higher than crystallization isotherm position. Heat pipe is immovably secured in growing unit, whereupon heating gives rise to melting of raw material and partial melting of seed crystal. At this moment, displacement of crucible is switched on. Once crystallization of melt completed, installation is switched into backing mode and its temperature decreases to ambient temperature value in accordance with preset program. Installation is finally opened and crystal is discharged. EFFECT: improved quality of grown crystals. 1 dwg