FIELD: semiconductor industry.
SUBSTANCE: invention relates to the field of growing semiconductor materials, in particular large-sized dislocation-free single crystals of germanium or silicon by the Chokhralsky method using a heating element in contact with the molten zone, the shape of which near the elongated crystal and its cross-section is controlled by heating the melt and regulating heat removal from the crystallized material and is aimed at growing them with a size as close as possible in diameter to the diameter of the crucible used. This is achieved by using an OTF heater immersed in the melt, which, on the one hand, makes it possible to create the necessary value of the axial temperature gradient at the crystallization front, and on the other hand, changing (laminating) the nature of the flow near the growing crystal, thereby eliminating the appearance of structural defects associated with an inhomogeneous flow. The OTF heater ensures the creation of thermal conditions favorable for crystal growth throughout its entire cross section up to the walls of the crucible, which or the OTF heater itself plays the role of a shaper. Due to the design of the composite crucible, in which the bottom moves relative to the shell, the issue of maintaining the melt at the same level is solved. And in the case of using feeding rods assembled in a hollow cylinder, they are used as a movable heat shield, which, along with additional heating of the upper part of the crucible, prevents heat removal from the crystal surface, starting from the crystallization front, to a height of at least its diameter, which makes it possible to create a one-dimensional temperature field in this part of the crystal, excluding the formation of dislocations. A device for implementing the method is proposed.
EFFECT: as a result, the solidified ingot is almost completely homogeneous in cross-section with the exception of a few millimeters at the edges.
7 cl, 9 dwg, 4 ex
