PROCESS OF MANUFACTURE OF SECONDARY EMISSION CATHODE Russian patent published in 1996 - IPC

Abstract RU 2069915 C1

FIELD: electronics. SUBSTANCE: process is related to manufacture of SHF devices of medium capacity. Layer 2.0-3.0 μm thick is formed on surface of metal alloy Pd-Ba by method of ion-plasma deposition of film composition containing palladium and 20-22% of magnesium oxide and is subjected to high-temperature heating under pressure of residual gases not higher than 10-4 Pa. EFFECT: improved operational efficiency of process. 1 tbl

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RU 2 069 915 C1

Authors

Korzhavyj A.P.

Zvonetskij V.I.

Mirzoeva S.D.

Shishkov A.V.

Aleksandrova G.N.

Dates

1996-11-27Published

1990-12-29Filed