FIELD: microelectronics. SUBSTANCE: in process of manufacture of SHF transistor structures with stabilizing emitter resistors regions of base and emitter are successively formed in silicon substrate. Region of emitter is formed in two stages. After performance of first stage resistive layer of system vanadium-silicon with content of vanadium of 15-25 atomic per cents is deposited up to thickness of 0.05-0.1 μm. Protective coat of resistive layer is formed simultaneously with performance of second stage in current of gaseous oxygen with thickness of 0.02-0.022 μm. Then topological pattern of resistors is formed, protective coat is removed, multilayer metallizing is applied, contacts to regions of base, emitter and emitter resistors are formed. EFFECT: facilitated manufacture.
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