METHOD AND DEVICE FOR PRODUCING FILMS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: device has cathode 1 emitting electrons for bombarding target 6 made of silicon oxide SiO₂ and located on insulated crucible 5; metal shield 2 surrounding cathode 1; annular electrode ( anode ) 3; power supply source 4 for applying voltage 4 kV to the anode which is greater than predetermined critical potential of 3 kV. In such conditions the target automatically takes a potential of 3 kV to provide the arrival the arrival of electrons into an interelectrode gap and ignition of a reflected discharge. Partially ionized vapors of the material of target are deposited on a substrate, a deposition rate of SiO₂ reaching a magnitude given in the invention description at a current in an anode circuit equal to 20-30 A. EFFECT: enhanced accuracy and efficiency. 2 cl, 2 dwg