POWER SPLITTER Russian patent published in 1997 - IPC

FIELD: microwave devices. SUBSTANCE: device is designed as two double-gate field-effect transistors. First gates of transistors are joined as serve as device input, sources are connected to housing, drains serve as device output. Each second gate is connected to resistor R which is connected to housing, and transmission line piece which end has gap with length l which conforms to following equation l, where is signal wavelength, λ is wave resistance of transmission line piece, Z_o and Z and Re(Z_ing2s) are input impedance and real part of input impedance of double-gate field-effect transistor between its second gate and source. EFFECT: increased functional capabilities. 1 dwg