MICROWAVE POWER DISTRIBUTOR Russian patent published in 1997 - IPC

FIELD: microwave devices. SUBSTANCE: device has four double-gate field-effect transistors which sources are connected to common line and second gates are connected to control terminals. Drains of first and second transistors are connected to first gates of third and fourth transistors respectively through capacitors. Phase shifter is inserted between first gates of third and fourth transistors. Device may be used in controlled microwave arrays for generation of multiple-beam pattern of receiving and transmitting sets for radio communication and ranging. EFFECT: increased functional capabilities. 1 dwg