SWITCHING MICROWAVE ARRAY Russian patent published in 1997 - IPC

FIELD: beam-pattern shaping devices for multiple-beam antennas. SUBSTANCE: device has horizontal lines and vertical columns which are provided by commutation gates. Each gate has two pairs of double-gate field- effect transistors, which sources are connected to earth. Drains of first pair of transistors are connected to each other and to first gates of second pair of transistors through separating capacitors. First gate of first transistor in each commutation gate is connected to drain of fourth transistor of commutation gate which is located in previous horizontal line and same vertical column; first gate of second transistor of each gate is connected to drain of third transistor of commutation gate which is located in previous vertical column and same horizontal line; first gates of second transistors of first vertical column serve as signal inputs. Drains of fourth transistors of gates of last horizontal line serve as signal outputs. Second gates of each transistor serve as control inputs of array. EFFECT: increased functional capabilities. 1 dwg