POWER ADDER Russian patent published in 1997 - IPC

FIELD: microwave devices. SUBSTANCE: device is designed as two double-gate field-effect transistors 2 and 3. First gates serve as signal inputs, second gates serve as control signal inputs. Drains are joined and serve as device outputs, sources are connected to housing. Drains are connected to transmission line which length is equal to one eighth of wavelength of middle of bandwidth and which wave resistance is equal to imagine part of output impedance of device. EFFECT: increased dynamic range of output signal. 1 dwg