STRAIN-GAGE TRANSDUCER MANUFACTURING PROCESS Russian patent published in 1997 - IPC

FIELD: measurement technology. SUBSTANCE: process involves forming insulating layer on both surfaces of silicon plate of first type of conductivity, coating working surface of plate with high-melting metal layer, opening cuts in peripheral part of plate, anisotropically etching through depth equal to thickness of flexible members, photolithographing and opening cuts to form flexible members. After that, deep anisotropic etching is made to additionally etch silicon at reference marks throughout entire thickness of plate; all shielding layers are removed, plate surface is washed out, whereupon diffusion strain-gage resistors of second type of conductivity and contact cuts for them are formed, and plate is metallized. Silicon nitride layer with silicon oxide sublayer may be used as insulating layer and titanium, tungsten, tantalum, or their alloys, as high-melting metal. To reduce induced defects, first anisotropic etching may be made in organic etching agent and second one, in alkali. EFFECT: improve quality of strain-gage transducers obtained. 4 cl, 1 dwg