METHOD OF MICRO-PROFILING OF SILICON STRUCTURES Russian patent published in 2015 - IPC H01L21/308 

FIELD: instrument engineering.

SUBSTANCE: method of micro-profiling of silicon structures comprises applying a protective film on the plate of single-crystal silicon, the formation from the protective film of the local mask in the area of microprofile formation, anisotropic etching of the plate of single-crystal silicon, applying the protective film, applying the layer of polycrystalline silicon, anisotropic etching of polycrystalline silicon, oxidation of polycrystalline silicon, etching of silicon dioxide with the newly applied protective film, etching the protective film to the surface of the plate, and anisotropic etching in the resulting window of the plate of single-crystal silicon. These processes are alternately repeated as many times as may be necessary until obtaining the desired microprofile followed by smoothing the resulting surface in the isotropic or anisotropic etching agent or anisotropic and isotropic etching agents.

EFFECT: reduction of labour intensity of manufacturing, and increase in quality of the structures.

2 dwg