METHOD FOR MANUFACTURING OF METAL-DIELECTRIC- SEMICONDUCTOR CAPACITOR Russian patent published in 1995 - IPC

Abstract SU 1752139 A1

FIELD: instruments. SUBSTANCE: method involves deposition of dielectric and metal layers to semiconductor plate, generation of groups of metal capacitor plates. Number of plates in group depends on design and manufacturing technology. Plates in group differ in their area by ± ΔS. Value of ΔS depends on characteristics of dielectric layers, errors in measuring capacitance and level of deviation of capacitance over surface of plate. EFFECT: increased functional capabilities.

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SU 1 752 139 A1

Authors

Aseev Ju.N.

Gaganov V.V.

Dates

1995-12-10—Published

1989-04-05—Filed