FIELD: microelectronics, in particular, method for manufacturing of silicon photodetector matrix in signal processing devices. SUBSTANCE: device has high-doped n+ type substrate, epitaxial n-type layer which is located on substrate and has injection p-type region. In addition device has base p-type region which has at least one collector + type region. In addition device has shielding region which embraces simultaneously injector and base area. In addition device has protection layer, inter-connection lines and contact electrodes. Contact electrodes to collector lines are made from transparent first-type material. Regions between contact electrodes to collector regions over base region are filled with transparent second-type material; contact electrodes are connected to inter-connection lines outside base region. EFFECT: increased functional capabilities. 3 cl, 2 dwg
