INTEGRATED BIPOLAR TRANSISTOR Russian patent published in 1995 - IPC

Abstract SU 1831966 A3

FIELD: semiconductor devices. SUBSTANCE: one emitter region is placed on each radial direction in symmetry relative to region positioned centrally. One contact to base region is arranged between contacts to emitter regions. Contacts to collector region are placed over periphery of collector region in symmetry at certain distance from each other and from base region. EFFECT: improved capability of parameter programming. 2 cl, 2 dwg, 2 tbl

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SU 1 831 966 A3

Authors

Dvornikov O.V.

Ljubyj E.M.

Dates

1995-05-10—Published

1989-05-16—Filed