FIELD: production of high-purity metals. SUBSTANCE: method includes pouring of melted tin into quartz container, in which total content of impurities ranges from 1•10-4 to 1 g, introduction of extra high-purity tin bromide with tin bromide-to-tin ratio of 1:100, performance of single zone crystallization at temperature of not in excess of 500 C, and rotation of the container at speed of 500 rpm, and motion of zone heater at a speed of 1.6 cm/h with simultaneous removal after cooling of contaminated part of tin ingot from its end and tin bromide contaminated with impurities. EFFECT: higher efficiency. 1 dwg, 1 tbl
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