FIELD: crystal growing. SUBSTANCE: invention relates to growing crystals under microgravity conditions and aims at avoiding contact of the melt of starting material with walls of crystallization chamber when growing crystals involving directed crystallization technique. Once starting material is molten, volume of crystallization chamber is decreased and then, as crystallization front is displaced from seed, indicated volume is progressively increased. EFFECT: improved crystallization quality. 3 dwg, 2 ex
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