METHOD OF PRODUCTION OF HIGH PURITY TITANIUM FOR SPUTTERED TARGETS Russian patent published in 2009 - IPC C22B34/12 C22B9/05 C22B9/22 

FIELD: metallurgy.

SUBSTANCE: source material in form of rod of metallic titanium obtained by iodide method is placed into boat of reactor made out of refractory material and heated to temperature 750-800°C; further flow of mixture of argon with bromine is run through reactor over source material. Mixture is obtained by running argon through a temperature-controlled at 20°C ampoule with liquid bromine. Mixture of argon with bromine is run through volatile bromides till maximal purification of rod from impurities. Purified titanium rod is subject to electron vacuum zone re-crystallisation till obtaining poly-crystal of high purity titanium. Amount of material required by weight in form of titanium poly-crystals is re-melted in a cooled flat crystalliser till obtaining cast structure of high quality by means of melting flat ingot from each side to total depth.

EFFECT: enhanced purity of titanium used for fine film metallisation as essential factor determining electro-physic parametres of applied fine layers.

1 dwg, 1 tbl, 1 ex