METHOD OF PRODUCING TIN HYPOTHIOPHOSPHATE OR INDIUM ORTHO-THIOPHOSPHATE Russian patent published in 1997 - IPC

FIELD: chemical technology, inorganic chemistry. SUBSTANCE: invention relates to method of producing tin (II) hypothiophosphate and indium (III) ortho-thiophosphate. Process is carried for two stages for 20- -30 min time-lag at each stage and at intermediate cooling to the room temperature and product grinding. Synthesis of tin thiophosphate and indium thiophosphate is carried out at 450-550 C and 350-450 C, respectively. Yield of products is 98%. Piezosensitivity of thin films (h is about 5-8 mcm) spray-coated by the proposed method is γ about (5.6-6.0) x 10^-7 V/Pa and relative dielectric permittivity εт33

/ε₀ is about 360-400 under condition of volume excitement at low frequencies. New method ensures to decrease the cost of synthesis of tin hypothiophosphate and indium ortho-thiophosphate by 5.8- and 1,4-fold, respectively. Synthesized compounds were used in semiconductive, piezoelectronic and radioelectronic industries. Synthesis involves new combination of the parent reagents reacting with phosphorus sulfide and sulfur at heating in air and the use of metal oxides. EFFECT: improved method of synthesis, improved quality of the end products. 4 tbl