METHOD OF SYNTHESIS OF TIN HYPOTHIOPHOSPHATE OR INDIUM ORTHO-THIOPHOSPHATE Russian patent published in 1997 - IPC

FIELD: chemical technology, inorganic chemistry. SUBSTANCE: invention relates to method of synthesis of tin hypothiophosphate Sn₂P₂S₆ and indium ortho-thiophosphate InPS₄. Process is carried out for two stages at 20-30 min time-lag at each stage and intermediate cooling to the room temperature and product grinding. Synthesis of tin hypothiophosphate and indium ortho-thiophosphate is carried out at 450-550 C and 350-450 C, respectively. Yield is 98%. New method of synthesis ensures to decrease the cost of synthesis of tin hypothiophosphate and indium ortho-thiophosphate by 5.8- and 1.4-fold, respectively. Piezosensitivity of thin films (h is about 5-8 mcm) spray-coated from Sn₂P₂S₆ synthesized by the proposed method is γ about (5.5-6.0) x 10^-7 V/Pa and relative dielectric permittivity ε₃₃/ε₀ about 360-400 at low frequency of volume excitement. The synthesized compounds were used in semiconductive, piezoelectronic and radioelectronic industries. EFFECT: improved method of synthesis. 4 tbl