METHOD OF MANUFACTURING REFRACTORY BASED ON SILICON CARBIDE AND SILICON Russian patent published in 1997 - IPC

Abstract RU 2095332 C1

FIELD: inorganic chemistry, more particularly manufacture of construction refractory material based on silicon carbide and silicon. SUBSTANCE: silicon carbide and silicon are poured into mold made or carbon-containing material. This mold gives the shape of product, and the whole is heated from room temperature to 2200 +-50 C in reducing atmosphere. Silicon carbide is first impregnated with melt and then with silicon vapors. The resulting composite material comprises silicon carbide as filler, and silicon carbide solution in silicon and bond. Silicon carbide heat resistance is higher than silicon melting temperature and silicon carbide strength properties improved at high temperatures. EFFECT: improved properties of the refractory material. 4 dwg

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RU 2 095 332 C1

Authors

Digonskij V.V.

Digonskij S.V.

Gorbovskij V.E.

Kravtsov E.D.

Dates

1997-11-10Published

1995-10-09Filed