FIELD: semiconductor optical electronics, in particular, light equipment, advertisement, show business, devices for optical information display, screening and photo equipment, modern art, medical devices, new home appliances, for tracing paths in dark rooms, light alarm systems. SUBSTANCE: device has system of electrodes which are located along longitudinal axis of source and are connected by means of connection members. In addition device has luminescent units in dielectric binder which are located between electrodes near surface and are designed as extended film regions. In addition light source may have extended limiting members, conducting lines and additional film layers. Light source may be flexible with respect to bend in direction which is perpendicular to line which joins mass centers of cross section of maximal number of electrodes. It also may be designed in multiple sections. Light source manufacturing method has two staged. During first stage it involves generation of core and film structure. Core may have electrodes which are connected by means of connection members. It consists of extended, limiting members and conducting lines and is made by means of drawing through fusion, solution or suspension of corresponding materials. Layered film structure is made from transparent polymer base by means of casting and/or thermal compression and/or pulverization. It may have at least one additional film layer and film luminescent layer. During second stage manufacturing method involves joining of core and film structures under pressure and heating in order to generate film regions of luminescent units between electrodes and to generate protection polymer coating of luminescent light source. EFFECT: increased field of application. 33 cl, 5 dwg
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Authors
Dates
1997-11-20—Published
1996-10-01—Filed